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Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 031508 (2017)
Date:
2017-03-07
DOI:
http://dx.doi.org/10.1116/1.4979007

Author Information

Name Institution
Virginia R. AndersonU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
Scooter D. JohnsonU.S. Naval Research Laboratory
Zachary R. RobinsonThe College at Brockport SUNY
Anindya NathGeorge Mason University
Alexander Campbell KozenU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Alexander DeMasiBoston University
Jennifer K. HiteU.S. Naval Research Laboratory
Karl F. Ludwig Jr.Boston University
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 360-480C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Diagnostic: Custom

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Fastscan/ICON

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Substrates

Sapphire

Notes

Used beamlines at Brookhaven and Cornell.
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