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PEALD AlN: controlling growth and film crystallinity

Type:
Conference Proceedings
Info:
physica status solidi (c) Volume 12, Issue 7, pages 1036--1042, 2015
Date:
2015-06-05
DOI:
http://dx.doi.org/10.1002/pssc.201510039

Author Information

Name Institution
Sourish BanerjeeUniversity of Twente
Antonius A. I. AarninkUniversity of Twente
Robbert van de KruijsUniversity of Twente
Alexey Y. KovalginUniversity of Twente
Jurriaan SchmitzUniversity of Twente

Films

Plasma AlN

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Substrates

Si(111)
Si(100)
SiO2

Notes

511