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Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack

Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:62, Issue:12, 2015
Date:
2015-10-26
DOI:
http://dx.doi.org/10.1109/TED.2015.2489224

Author Information

Name Institution
Huy Binh DoNational Chiao Tung University
Quang Ho LucNational Chiao Tung University
Minh Thien Huu HaNational Chiao Tung University
Chenming Calvin HuUniversity of California - Berkeley
Yueh Chin LinNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Sopra GES-5E

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific Microlab 350

Substrates

InGaAs

Notes

Document text and references 1 and 3 suggest the AlN is a plasma film.
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