About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Type:
Journal
Info:
Appl. Phys. Lett. 103, 082110 (2013)
Date:
2013-08-20
DOI:
http://dx.doi.org/10.1063/1.4818792

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Nadeemullah A. MahadikU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 200-650C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Band Gap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Resistivity, Sheet Resistance
Analysis: Two-point Probe
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Si(111)
Sapphire
GaN

Notes

All substrates solvent cleaned and DI rinsed.
Si(111) HF cleaned.
GaN HF + pirahna cleaned.
In situ sample prep included TMG + H2 plasma to simulate Ga-flash-off process followed by H2 plasma and N2 plasma.
95