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Nitride memristors

Type:
Journal
Info:
Applied Physics A 2012, Volume 109, Issue 1, pp 1--4
Date:
2012-07-03
DOI:
http://dx.doi.org/10.1007/s00339-012-7052-x

Author Information

Name Institution
Byung Joon ChoiHewlett-Packard
J. Joshua YangHewlett-Packard
Min-Xian Max ZhangHewlett-Packard
Kate J. NorrisUniversity of California - Santa Cruz
Douglas A. A. OhlbergHewlett-Packard
Nobuhiko P. KobayashiUniversity of California - Santa Cruz
Gilberto Medeiros-RibeiroHewlett-Packard
R. Stanley WilliamsHewlett-Packard

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Plasma TiN

Hardware used: Unknown
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4156A

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

657