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600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation

Type:
Conference Proceedings
Info:
CS MANTECH Conference 2013 Proceedings 255-258
Date:
2013-05-13
DOI:
http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.655.7026&rep=rep1&type=pdf

Author Information

Name Institution
Zhikai TangHong Kong University of Science and Technology
Sen HuangChinese Academy of Sciences
Qimeng JiangHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

AlGaN

Notes

1382