Study on the electrical characteristics of in situ PEALD-passivated HfO₂/In_0.53Ga_0.47As MOSCAP and MOSFET structures

Type:

Conference Proceedings

Info:

2016 China Semiconductor Technology International Conference (CSTIC)

Date:

2016-03-14

DOI:

http://dx.doi.org/10.1109/CSTIC.2016.7464089

Author Information

Name	Institution
Quang Ho Luc	National Chiao Tung University
Po-Chun Chang	National Chiao Tung University
Huy Binh Do	National Chiao Tung University
Yueh Chin Lin	National Chiao Tung University
Edward Yi Chang	National Chiao Tung University

Hardware used: Unknown

Deposition Temperature Range N/A

Hardware used: Unknown

Deposition Temperature Range N/A

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