Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks

Type:

Journal

Info:

ACS Appl. Electron. Mater. 2020, 2, 4, 891-897

Date:

2020-03-24

DOI:

http://dx.doi.org/10.1021/acsaelm.9b00819

Author Information

Name	Institution
Chin-I Wang	National Taiwan University
Teng-Jan Chang	National Taiwan University
Yu-Tung Yin	National Taiwan University
Yu-Sen Jiang	National Taiwan University
Jing-Jong Shyue	Academia Sinica
Miin-Jang Chen	National Taiwan University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

N₂, Nitrogen

CAS#: 7727-37-9

H₂, Hydrogen

CAS#: 1333-74-0

Deposition Temperature = 300C

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

CAS#: 7727-37-9

CAS#: 1333-74-0

CAS#: 7440-37-1

CAS#: 7440-59-7

Deposition Temperature = 300C

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me₂N)₄Ti

CAS#: 3275-24-9

N₂, Nitrogen

CAS#: 7727-37-9

H₂, Hydrogen

CAS#: 1333-74-0

Deposition Temperature = 300C

Thermal HfO₂

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me₂N)₄Hf, also CAS# 19782-68-4

CAS#: 19962-11-9

H₂O, Water

CAS#: 7732-18-5

Deposition Temperature = 300C