Miin-Jang Chen Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Miin-Jang Chen returned 28 record(s).

Number	Title
1	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
2	Hydrophilic/hydrophobic surface of Al₂O₃ thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
3	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO₂ Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
4	Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
5	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
6	Induction of ferroelectricity in nanoscale ZrO₂ thin films on Pt electrode without post-annealing
7	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
8	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
9	Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
10	In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
11	Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
12	Improved Electrical Properties of Crystalline ZrO₂/Al₂O₃ Buffer Gate Stack with Double Nitridation
13	P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
14	Effect of hydrogen participation on the improvement in electrical characteristics of HfO₂ gate dielectrics by post-deposition remote N₂ , N₂/H₂, and NH₃ plasma treatments
15	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
16	Double nitridation of crystalline ZrO₂/Al₂O₃ buffer gate stack with high capacitance, low leakage and improved thermal stability
17	Effect of atomic layer plasma treatment on TALD-ZrO₂ film to improve the corrosion protection of Mg-Ca alloy
18	Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
19	Ferroelectricity of HfZrO₂ in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
20	Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
21	Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
22	Suppression of GeO_x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
23	Sub-7-nm textured ZrO₂ with giant ferroelectricity
24	Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al₂O₃/TiO₂ Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
25	AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
26	Improvement in electrical characteristics of HfO₂ gate dielectrics treated by remote NH₃ plasma
27	Sub-nanometer heating depth of atomic layer annealing
28	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique

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Miin-Jang Chen Plasma Enhanced Atomic Layer Deposition Film Publications