Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Type:
Journal
Info:
IEEE J. Electron Dev. Soc., Vol. 3, No. 4, July 2015, pp. 377-381
Date:
2015-05-20
DOI:
http://dx.doi.org/10.1109/JEDS.2015.2435492

Author Information

Name Institution
Min-Hung LeeNational Taiwan Normal University
Y.-T. WeiNational Taiwan Normal University
C. LiuNational Taiwan Normal University
Jhih-Jie HuangNational Taiwan University
Ming TangPTEK Technology Company Ltd.
Yu-Lun ChuehNational Tsing Hua University
K.-Y. ChuNational Taiwan Normal University
Miin-Jang ChenNational Taiwan University
Heng-Yuan LeeIndustrial Technology Research Institute
Yu-Sheng ChenIndustrial Technology Research Institute
Li-Heng LeeIndustrial Technology Research Institute
Ming-Jinn TsaiIndustrial Technology Research Institute

Films

Plasma HfZrO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Surface Potential
Analysis: -
Diagnostic: -

Substrates

TiN

Notes

361