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Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Type:
Journal
Info:
Scientific Reports 7, Article number: 39717 (2016)
Date:
2016-11-25
DOI:
http://dx.doi.org/10.1038/srep39717

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Wei-Hao LeeNational Taiwan University
Wei-Chung KaoNational Taiwan University
Yung-Chuan ChuangNational Taiwan University
Ray-Ming LinChang Gung University
Hsin-Chih LinNational Taiwan University
Makoto ShiojiriKyoto Institute of Technology
Miin-Jang ChenNational Taiwan University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: NT-MDT NTEGRA Spectra

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: JEOL JAMP-9510F

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Nova 600i Nanolab

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Diagnostic: Ecopia HMS-3000

Substrates

Sapphire

Notes

875