Effect of hydrogen participation on the improvement in electrical characteristics of HfO₂ gate dielectrics by post-deposition remote N₂ , N₂/H₂, and NH₃ plasma treatments

Type:

Journal

Info:

2013 J. Phys. D: Appl. Phys. 46 055103

Date:

2012-11-08

DOI:

http://dx.doi.org/10.1088/0022-3727/46/5/055103

Author Information

Name	Institution
Li-Tien Huang	National Taiwan University
Ming-lun Chang	Integrated Service Technology Inc.
Jhih-Jie Huang	National Taiwan University
Chin-Lung Kuo	National Taiwan University
Hsin-Chih Lin	National Taiwan University
Ming-Han Liao	National Taiwan University
Min-Hung Lee	National Taiwan Normal University
Miin-Jang Chen	National Taiwan University

CAS#: 352535-01-4

CAS#: 7782-44-7

Deposition Temperature = 250C

Characteristic: Bonding States

Analysis: XPS, X-ray Photoelectron Spectroscopy

Diagnostic: -

Silicon

607