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Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2013, 5 (2), pp 227-232
Date:
2012-12-21
DOI:
http://dx.doi.org/10.1021/am301799j

Author Information

Name Institution
Jui-Fen ChienNational Taiwan University
Hua-Yang LiaoAcademia Sinica
Sheng-Fu YuNational Cheng Kung University
Ray-Ming LinChang Gung University
Makoto ShiojiriKyoto Institute of Technology
Jing-Jong ShyueNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Other ZnON

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Diagnostic: Ecopia HMS-3000

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Diagnostic: Ecopia HMS-3000

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Diagnostic: Ecopia HMS-3000

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2430 Source Meter

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

GaN

Notes

673