Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2012, 4 (7), pp 3471-3475
Date:
2012-06-11
Author Information
| Name | Institution |
|---|---|
| Jui-Fen Chien | National Taiwan University |
| Ching-Hsiang Chen | Protrustech Corporation Limited |
| Jing-Jong Shyue | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Other ZnON
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 557-20-0
CAS#: 7732-18-5
CAS#: 7664-41-7
CAS#: 1333-74-0
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: X-ray Absorption Spectroscopy
Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Characteristic: Conductivity Type
Analysis: Hall effect/van der Pauw method
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Substrates
| Sapphire |
Notes
| 654 |