Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Type:
Journal
Info:
Scientific Reports 5, Article number: Enter 13671 (2015)
Date:
2015-08-03
DOI:
http://dx.doi.org/

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Makoto ShiojiriKyoto Institute of Technology
Ching-Hsiang ChenNational Taiwan University of Science and Technology
Sheng-Fu YuChinese Academy of Sciences
Chung-Ting KoNational Taiwan University
Jer-Ren YangNational Taiwan University
Ray-Ming LinChang Gung University
Miin-Jang ChenNational Taiwan University

Films

Plasma GaN

Hardware used: Unknown
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Threading Dislocations
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Sapphire

Notes

409