About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Type:
Journal
Info:
Scientific Reports 5, Article number: Enter 13671 (2015)
Date:
2015-08-03
DOI:
http://dx.doi.org/

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Makoto ShiojiriKyoto Institute of Technology
Ching-Hsiang ChenNational Taiwan University of Science and Technology
Sheng-Fu YuChinese Academy of Sciences
Chung-Ting KoNational Taiwan University
Jer-Ren YangNational Taiwan University
Ray-Ming LinChang Gung University
Miin-Jang ChenNational Taiwan University

Films

Plasma GaN

Hardware used: Unknown
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Threading Dislocations
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Sapphire

Notes

409