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GaN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing GaN films returned 41 record(s).

NumberTitle
1Self-Limiting Growth of GaN at Low Temperatures
2Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
3Layer-by-layer epitaxial growth of GaN at low temperatures
4Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
5Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
6Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
7Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
8Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
9Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
10Perspectives on future directions in III-N semiconductor research
11Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
12Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
13Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
14Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
15A route to low temperature growth of single crystal GaN on sapphire
16Protective capping and surface passivation of III-V nanowires by atomic layer deposition
17Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
18Gallium nitride thin films by microwave plasma-assisted ALD
19Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
20Atomic layer deposition of GaN at low temperatures
21Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
22Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures