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Perspectives on future directions in III-N semiconductor research

Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(5), Sep/Oct 2013
Date:
2013-07-16
DOI:
http://dx.doi.org/10.1116/1.4813687

Author Information

Name Institution
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Neeraj NepalAmerican Society for Engineering Education
Jennifer K. HiteU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma AlInN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Mobility
Analysis: Four Point Probe Hall Effect
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: Four Point Probe Hall Effect
Diagnostic: -

Characteristic: Reflectance Spectra
Analysis: Reflection Spectroscopy
Diagnostic: Yokogawa AQ6375

Substrates

Sapphire
Si(111)
GaN

Notes

All substrates solvent cleaned and DI rinsed.
Si(111) HF cleaned.
GaN HF + HCl cleaned.
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