Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 28 record(s).

NumberTitle
1Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
2Perspectives on future directions in III-N semiconductor research
3Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
4Perspectives on future directions in III-N semiconductor research
5Atomic layer epitaxy for quantum well nitride-based devices
6Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
7Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
8Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
9Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
10Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
11Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
12The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
13Atomic layer deposition of InN using trimethylindium and ammonia plasma
14Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
15Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
16Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
17Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
18Atomic layer epitaxy for quantum well nitride-based devices