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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

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In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 28 record(s).

NumberTitle
1Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
2Atomic layer epitaxy for quantum well nitride-based devices
3Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
4Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
5Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
6Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
7Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
8Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
9Atomic layer deposition of InN using trimethylindium and ammonia plasma
10Perspectives on future directions in III-N semiconductor research
11Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
12Perspectives on future directions in III-N semiconductor research
13Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
14Atomic layer epitaxy for quantum well nitride-based devices
15Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
16The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
17Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
18Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering