Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 28 record(s).

NumberTitle
1Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
2Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
3Perspectives on future directions in III-N semiconductor research
4Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
5Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
6Atomic layer epitaxy for quantum well nitride-based devices
7Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
8Atomic layer epitaxy for quantum well nitride-based devices
9Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
10Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
11Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
12The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
13Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
14Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
15Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
16Perspectives on future directions in III-N semiconductor research
17Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
18Atomic layer deposition of InN using trimethylindium and ammonia plasma