Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 28 record(s).

NumberTitle
1Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
2Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
3Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
4Atomic layer deposition of InN using trimethylindium and ammonia plasma
5Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
7Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
8Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
9Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
10Perspectives on future directions in III-N semiconductor research
11Perspectives on future directions in III-N semiconductor research
12The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
13Atomic layer epitaxy for quantum well nitride-based devices
14Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
15Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
16Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
17Atomic layer epitaxy for quantum well nitride-based devices
18Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition