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Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020910 (2019)
Date:
2018-12-21
DOI:
http://dx.doi.org/10.1116/1.5063340

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Virginia R. AndersonAmerican Society for Engineering Education
Scooter D. JohnsonU.S. Naval Research Laboratory
Brian P. DowneyU.S. Naval Research Laboratory
David J. MeyerU.S. Naval Research Laboratory
Zachary R. RobinsonThe College at Brockport SUNY
Jeffrey M. WoodwardAmerican Society for Engineering Education
Karl F. Ludwig Jr.Boston University
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma InN

Hardware used: Custom Remote Inductively Coupled Plasma
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Nucleation
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Diagnostic: Synchrotron

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Fastscan/ICON

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: -

Substrates

Sapphire

Notes

1430