Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

InN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing InN films returned 21 record(s).

NumberTitle
1In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
2Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
3The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
4Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
5Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
6The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
7Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
8Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
9Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
10Perspectives on future directions in III-N semiconductor research
11Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
12Atomic layer deposition of InN using trimethylindium and ammonia plasma
13Atomic layer epitaxy for quantum well nitride-based devices