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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Atomic layer epitaxy for quantum well nitride-based devices

Type:
Journal
Info:
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII
Date:
2016-02-13
DOI:
http://dx.doi.org/10.1117/12.2209111

Author Information

Name Institution
Jennifer K. HiteU.S. Naval Research Laboratory
Neeraj NepalSotera Defense Solutions
Virginia R. AndersonAmerican Society for Engineering Education
Jaime A. FreitasU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlInN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(111)
Sapphire
GaN

Notes

803