Atomic layer epitaxy for quantum well nitride-based devices

Type:

Journal

Info:

Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII

Date:

2016-02-13

DOI:

http://dx.doi.org/10.1117/12.2209111

Author Information

Name	Institution
Jennifer K. Hite	U.S. Naval Research Laboratory
Neeraj Nepal	Sotera Defense Solutions
Virginia R. Anderson	American Society for Engineering Education
Jaime A. Freitas	U.S. Naval Research Laboratory
Michael A. Mastro	U.S. Naval Research Laboratory
Charles R. Eddy, Jr.	U.S. Naval Research Laboratory

Films

Plasma AlInN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

In(CH₃)₃, InMe₃, TriMethyl Indium, TMI

CAS#: 3385-78-2

CAS#: 7727-37-9

CAS#: 1333-74-0

Deposition Temperature Range N/A

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

In(CH₃)₃, InMe₃, TriMethyl Indium, TMI

CAS#: 3385-78-2

CAS#: 7727-37-9

CAS#: 1333-74-0

Deposition Temperature Range N/A

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

CAS#: 7727-37-9

CAS#: 1333-74-0

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness

Analysis: Ellipsometry

Diagnostic: -

Substrates

Si(111)
Sapphire
GaN

Notes

803