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Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 117, 093101 (2020)
Date:
2020-08-20
DOI:
http://dx.doi.org/10.1063/5.0014900

Author Information

Name Institution
Chih-Wei HsuLinköping University
Petro DeminskyiLinköping University
Ivan MartinovicLinköping University
Ivan G. IvanovLinköping University
Justinas PalisaitisLinköping University
Henrik PedersenLinköping University

Films

Plasma InN

Hardware used: Picosun R200
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 320C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

4H n-SiC(0001)

Notes

1583