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Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 031504 (2017)
Date:
2017-02-17
DOI:
http://dx.doi.org/10.1116/1.4978026

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Virginia R. AndersonAmerican Society for Engineering Education
Scooter D. JohnsonU.S. Naval Research Laboratory
Brian P. DowneyU.S. Naval Research Laboratory
David J. MeyerU.S. Naval Research Laboratory
Alexander DeMasiBoston University
Zachary R. RobinsonThe College at Brockport SUNY
Karl F. Ludwig Jr.Boston University
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma InN

Hardware used: Custom
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 200-248C

Film/Plasma Properties

Characteristic: Nucleation
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Diagnostic: Synchrotron

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Synchrotron

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension 5

Characteristic: Carrier Concentration
Analysis: van der Pauw sheet resistance
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Diagnostic: -

Substrates

Sapphire

Notes

1033