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Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy

Type:
Journal
Info:
Cryst. Growth Des. 2013, 13, 1485−1490
Date:
2013-02-07
DOI:
http://dx.doi.org/10.1021/cg3016172

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Nadeemullah A. MahadikU.S. Naval Research Laboratory
Luke O. NyakitiU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Michael J. MehlU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: LD, Laue Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Band Gap
Analysis: Reflection Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Substrates

Sapphire
Si(111)
GaN

Notes

Si(111) HF cleaned.
GaN(0001) HF + 15% HCl cleaned.
Substrates subjected to in situ N2 plasma prior to depositions.
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