About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 04F401 (2018)
Date:
2018-01-09
DOI:
http://dx.doi.org/10.1116/1.5008464

Author Information

Name Institution
Andrea IlliberiTNO
Ilias KatsourasTNO
Sasa GazibegovicTNO
Brian CobbTNO
Elida NekovicTNO
Willem van BoekelTNO
Corne FrijtersTNO
Joris MaasTNO
Fred RoozeboomTNO
Yves CreyghtonTNO
Paul PoodtTNO
Gerwin GelinckTNO

Films

Plasma InZnO

Hardware used: Custom Spatial
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 160C

Plasma In2O3

Hardware used: Custom Spatial
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 160C

Plasma ZnO

Hardware used: Custom Spatial
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 160C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Philips X-pert SR5068

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

1272