Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s).

NumberTitle
1Thin film GaP for solar cell application
2Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
3Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
4Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
5Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
6Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
7Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
8Low temperature plasma enhanced deposition of GaP films on Si substrate
9Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
10Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
11Gallium nitride thin films by microwave plasma-assisted ALD
12Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
13Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
14Plasma enhanced atomic layer deposition of gallium sulfide thin films
15n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
16Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
17Self-Limiting Growth of GaN at Low Temperatures
18Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
19Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
20Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
21Capacitance characterization of GaP/n-Si structures grown by PE-ALD
22Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
23RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
24Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
25Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
26Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
27Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
28Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
29Protective capping and surface passivation of III-V nanowires by atomic layer deposition
30Atomic layer deposition of GaN at low temperatures
31Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
32Influence of PE-ALD of GaP on the Silicon Wafers Quality
33Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
34Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
35Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
36Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
37Perspectives on future directions in III-N semiconductor research
38Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
39Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
40Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
41Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
42Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
43Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
44Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
45Study of GaP/Si Heterojunction Solar Cells
46Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma