Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s).

NumberTitle
1Influence of PE-ALD of GaP on the Silicon Wafers Quality
2Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
3Self-Limiting Growth of GaN at Low Temperatures
4Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
5Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
6Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
7Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
8Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
9Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
10Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
11Perspectives on future directions in III-N semiconductor research
12Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
14Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
15Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
16Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
17Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
18RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
19Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
20Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
21Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
22Capacitance characterization of GaP/n-Si structures grown by PE-ALD
23Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
24Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
25Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
26Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
27Low temperature plasma enhanced deposition of GaP films on Si substrate
28Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
29Plasma enhanced atomic layer deposition of gallium sulfide thin films
30Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
31Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
32Thin film GaP for solar cell application
33n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
34Atomic layer deposition of GaN at low temperatures
35Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
36Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
37Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
38Gallium nitride thin films by microwave plasma-assisted ALD
39Study of GaP/Si Heterojunction Solar Cells
40Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
41Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
42Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
43Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
44Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
45Protective capping and surface passivation of III-V nanowires by atomic layer deposition
46Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy