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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

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TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s).

NumberTitle
1Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
2Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
3Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
4Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
5Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
6Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
7Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
8Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
9Study of GaP/Si Heterojunction Solar Cells
10Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
11Plasma enhanced atomic layer deposition of gallium sulfide thin films
12Self-Limiting Growth of GaN at Low Temperatures
13Capacitance characterization of GaP/n-Si structures grown by PE-ALD
14Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
15RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
16Perspectives on future directions in III-N semiconductor research
17Thin film GaP for solar cell application
18Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
19Atomic layer deposition of GaN at low temperatures
20Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
21Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
22Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
23Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
24Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
25Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
26Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
27Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
28Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
29Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
30Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
31Influence of PE-ALD of GaP on the Silicon Wafers Quality
32Low temperature plasma enhanced deposition of GaP films on Si substrate
33Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
34Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
35Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
36Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
37n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
38Gallium nitride thin films by microwave plasma-assisted ALD
39Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
40Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
41Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
42Protective capping and surface passivation of III-V nanowires by atomic layer deposition
43Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
44Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
45Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
46Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions