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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

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TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s).

NumberTitle
1Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
2Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
3RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
4Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
5Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
6Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
7Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
8Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
9Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
10Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
11Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
12Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
13Plasma enhanced atomic layer deposition of gallium sulfide thin films
14Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
15Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
16Influence of PE-ALD of GaP on the Silicon Wafers Quality
17Capacitance characterization of GaP/n-Si structures grown by PE-ALD
18Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
19Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
20Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
21Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
22Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
23Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
24Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
25Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
26Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
27Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
28Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
29Protective capping and surface passivation of III-V nanowires by atomic layer deposition
30Atomic layer deposition of GaN at low temperatures
31Study of GaP/Si Heterojunction Solar Cells
32Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
33Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
34Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
35Perspectives on future directions in III-N semiconductor research
36Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
37Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
38Gallium nitride thin films by microwave plasma-assisted ALD
39Thin film GaP for solar cell application
40Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
41Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
42n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
43Low temperature plasma enhanced deposition of GaP films on Si substrate
44Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
45Self-Limiting Growth of GaN at Low Temperatures
46Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions