Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s).

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
3Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
4Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
5Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
6Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
7RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
8Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
9Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
10Influence of PE-ALD of GaP on the Silicon Wafers Quality
11Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
12Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
13Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
14Atomic layer deposition of GaN at low temperatures
15Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
16Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
17Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
18Low temperature plasma enhanced deposition of GaP films on Si substrate
19Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
20Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
21Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
22n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
23Gallium nitride thin films by microwave plasma-assisted ALD
24Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
25Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
26Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
27Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
28Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
29Self-Limiting Growth of GaN at Low Temperatures
30Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
31Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
32Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
33Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
34Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
35Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
36Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
37Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
38Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
39Thin film GaP for solar cell application
40Protective capping and surface passivation of III-V nanowires by atomic layer deposition
41Plasma enhanced atomic layer deposition of gallium sulfide thin films
42Perspectives on future directions in III-N semiconductor research
43Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
44Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
45Capacitance characterization of GaP/n-Si structures grown by PE-ALD
46Study of GaP/Si Heterojunction Solar Cells