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RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma

Type:
Conference Proceedings
Info:
IEICE Tech. Rep., vol. 114, no. 202, CPM2014-86, pp. 59-64, Sept. 2014
Date:
2014-08-28
DOI:
http://www.ieice.org/ken/paper/20140905201409059BqO/eng/

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Ga2O3

Hardware used: Unknown
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: -

Substrates

Notes

562