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Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen

Type:
Journal
Info:
Applied Physics Letters 58, 1187-1189 (1991)
Date:
1990-12-13
DOI:
http://dx.doi.org/10.1063/1.104360

Author Information

Name Institution
M. de KeijserPhilips
C. van OpdorpPhilips

Films

Plasma GaAs

Hardware used: Custom Microwave Plasma
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
AsH3, Arsine
CAS#: 7784-42-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 20-500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Notes

1468