Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
Type:
Journal
Info:
Applied Physics Letters 58, 1187-1189 (1991)
Date:
1990-12-13
Author Information
| Name | Institution |
|---|---|
| M. de Keijser | Philips |
| C. van Opdorp | Philips |
Films
Plasma GaAs
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
Notes
| 1468 |