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Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source

Type:
Conference Proceedings
Info:
IEICE Tech. Rep., vol. 115, no. 329, ED2015-81, pp. 69-72, Nov. 2015.
Date:
2015-11-25
DOI:
http://www.ieice.org/ken/paper/20151127VbEe/eng/

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma GaN

Hardware used: Unknown
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 25-115C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: -

Characteristic: Surface Reactions
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

TMG adsorption at room temperature and NH3 plasma at 115C.
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