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Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma

Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(1), Jan/Feb 2013
Date:
2012-10-12
DOI:
http://dx.doi.org/10.1116/1.4758782

Author Information

Name Institution
İnci DönmezBilkent University
Çağla ÖzgitBilkent University
Necmi BiyikliBilkent University

Films

Plasma Ga2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

Si(111)

Notes

RTA under N2 ambient.
109