Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma

Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(1), Jan/Feb 2013
Date:
2012-10-12
DOI:
http://dx.doi.org/10.1116/1.4758782

Author Information

Name Institution
İnci DönmezBilkent University
Çağla ÖzgitBilkent University
Necmi BiyikliBilkent University

Films

Plasma Ga2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

Si(111)

Notes

RTA under N2 ambient.
109