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Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 40(4) 2022 042603
Date:
2022-05-23
DOI:
http://dx.doi.org/10.1116/6.0001871

Author Information

Name Institution
Kevin A. HatchArizona State University
Daniel C. MessinaArizona State University
Robert J. NemanichArizona State University

Films

Plasma Ga2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG-Scienta R3000

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Substrates

Si(100)

Notes

1706