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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD

Type:
Journal
Info:
Phys. Status Solidi C 2017, 14, 1700150
Date:
2017-10-09

Author Information

Name Institution
Alexander S. GudovskikhSt. Petersburg Academic University
Alexander V. UvarovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Artem I. BaranovSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
E.V. NikitinaSt. Petersburg Academic University
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP


Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Silicon

Notes

1102