Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

PH3, Phospine, Phosphane, CAS# 7803-51-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s).

NumberTitle
1Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
2n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
3Study of GaP/Si Heterojunction Solar Cells
4Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
5Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
6Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
7Low temperature plasma enhanced deposition of GaP films on Si substrate
8Influence of PE-ALD of GaP on the Silicon Wafers Quality
9Thin film GaP for solar cell application
10Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
11Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
12Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
13Capacitance characterization of GaP/n-Si structures grown by PE-ALD