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Thin film GaP for solar cell application

Type:
Journal
Info:
Journal of Physics: Conference Series 741 (2016) 012088
Date:
2016-09-22
DOI:
https://doi.org/10.1088/1742-6596/741/1/012088

Author Information

Name Institution
Ivan A. MorozovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
E.V. NikitinaSt. Petersburg Academic University
Jean-Paul KleiderGeePs Group of electrical engineering - Paris
A V MyasoedovIoffe Institute
V LevitskiyResearch and development center for thin-film technologies in energetics

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
PH3, Phospine, Phosphane
CAS#: 7803-51-2
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Supra 25

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Supra 25

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips EM420

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips EM420

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: Philips EM420

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Accent RPM Sigma PL system

Substrates

Si(100)

Notes

911