Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
Author Information
| Name | Institution |
|---|---|
| Alexander S. Gudovskikh | St. Petersburg Academic University |
| Alexander V. Uvarov | St. Petersburg Academic University |
| Ivan A. Morozov | St. Petersburg Academic University |
| Artem I. Baranov | St. Petersburg Academic University |
| Dmitry A. Kudryashov | St. Petersburg Academic University |
| Kirill S. Zelentsov | St. Petersburg Academic University |
| Alexandre Jaffré | GeePs Group of electrical engineering - Paris |
| Sylvain Le Gall | GeePs Group of electrical engineering - Paris |
| Arouna Darga | GeePs Group of electrical engineering - Paris |
| Aurore Brezard-Oudot | GeePs Group of electrical engineering - Paris |
| Jean-Paul Kleider | GeePs Group of electrical engineering - Paris |
Films
Plasma GaP
Plasma Si:GaP
Film/Plasma Properties
Substrates
| Si(001) |
Notes
| 1293 |