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Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer

Type:
Conference Proceedings
Info:
Journal of Physics: Conference Series 917 (2017) 052004
Date:
2017-11-01
DOI:
http://dx.doi.org/10.1088/1742-6596/917/5/052004

Author Information

Name Institution
Alexander V. UvarovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
PH3, Phospine, Phosphane
CAS#: 7803-51-2
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: -

Substrates

Si(100)
Quartz

Notes

1093