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Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation

Type:
Journal
Info:
jun J. Phys. D: Appl. Phys. 53 345105
Date:
2020-04-22

Author Information

Name Institution
Alexander V. UvarovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Vladimir N. NevedomskiyIoffe Institute
Artem I. BaranovSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP


Plasma GaP




CAS#: 1333-74-0

CAS#: 7440-37-1

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy

Substrates

Si(100)

Notes

1496