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Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 060909 (2019)
Date:
2019-11-04
DOI:
http://dx.doi.org/10.1116/1.5128208

Author Information

Name Institution
David R. BorisU.S. Naval Research Laboratory
Virginia D. WheelerU.S. Naval Research Laboratory
Jason R. AvilaU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Scott G. WaltonU.S. Naval Research Laboratory

Films

Plasma TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-350C

Plasma TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Ar, Argon
CAS#: 7440-37-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-350C

Plasma Ga2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Plasma Ga2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Ar, Argon
CAS#: 7440-37-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Plasma Plasma Study

Hardware used: Custom Remote Inductively Coupled Plasma
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Plasma Study

Hardware used: Custom Remote Inductively Coupled Plasma
Ar, Argon
CAS#: 7440-37-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics HR2000+

Characteristic: Plasma Potential
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: EEDF, Electron Energy Distribution Function
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Ion Density
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Plasma Species
Analysis: VUV Spectroscopic Elllipsometry
Diagnostic: McPherson 234/302 monochrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Substrates

Sapphire
Silicon

Notes

1550