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Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions

Type:
Journal
Info:
Chem. Mater. 2016, 28, 5282-5294
Date:
2016-07-01
DOI:
http://dx.doi.org/10.1021/acs.chemmater.6b00676

Author Information

Name Institution
Jaclyn K. SprengerUniversity of Colorado, Boulder
A. S. CavanaghUniversity of Colorado, Boulder
Zhipei SunUniversity of Colorado, Boulder
Kathryn J. WahlU.S. Naval Research Laboratory
Alexana RoshkoNational Institute of Standards and Technology
Steven GeorgeUniversity of Colorado, Boulder

Films

Other GaN

Hardware used: Custom
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
H2, Hydrogen
CAS#: 1333-74-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: -

Substrates

Si(111)

Notes

930