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Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Materials Letters, Volume 237, Pages 105 - 108
Date:
2018-11-04
DOI:
https://doi.org/10.1016/j.matlet.2018.11.012

Author Information

Name Institution
Fengfeng ShiBeijing University of Technology
Jun HanBeijing University of Technology
Yanhui XingBeijing University of Technology
Junshuai LiSuzhou Institute of Nano-Tech and Nano-Bionics
Li ZhangSuzhou Institute of Nano-Tech and Nano-Bionics
Tao HeSuzhou Institute of Nano-Tech and Nano-Bionics
Tao LiBeijing University of Technology
Xuguang DengSuzhou Institute of Nano-Tech and Nano-Bionics
Xiaodong ZhangSuzhou Institute of Nano-Tech and Nano-Bionics
Baoshun ZhangSuzhou Institute of Nano-Tech and Nano-Bionics

Films

Plasma Ga2O3

Hardware used: Unknown
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Substrates

Sapphire

Notes

1534