Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Current Applied Physics Volume 19, Issue 2, 2019, Pages 72-81
Date:
2018-11-21
Author Information
| Name | Institution |
|---|---|
| Xing Li | Fudan University |
| Hong Liang Lu | Fudan University |
| Hong-Ping Ma | Fudan University |
| Jian-Guo Yang | Fudan University |
| Jin-Xin Chen | Fudan University |
| Wei Huang | Fudan University |
| Qixin Guo | Saga University |
| Ji-Jun Feng | University of Shanghai for Science and Technology |
| David Wei Zhang | Fudan University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Quartz |
| Si(100) |
Notes
| 1621 |