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Plasma enhanced atomic layer deposition of gallium sulfide thin films

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020915 (2019)
Date:
2019-01-03
DOI:
http://dx.doi.org/10.1116/1.5079553

Author Information

Name Institution
Jakob KuhsGhent University
Zeger HensGhent University
Christophe DetavernierGhent University

Films

Plasma GaS

Hardware used: Custom Remote Inductively Coupled Plasma
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
Deposition Temperature Range = 70-350C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: Micropillars
Diagnostic: Custom

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: PerkinElmer lambda 950 Spectrophotometer

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Hiden HPR-30

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Substrates

SiO2
Quartz

Notes

No thermal ALD reaction between TMGa and H2S
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