Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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H2S, Hydrogen Sulfide, CAS# 7783-06-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 27 record(s).

NumberTitle
1Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
2Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
3Plasma enhanced atomic layer deposition of aluminum sulfide thin films
4Plasma enhanced atomic layer deposition of gallium sulfide thin films
5Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
6Controlling transition metal atomic ordering in two-dimensional Mo1-xWxS2 alloys
7Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
8Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
9Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry
10Controlling transition metal atomic ordering in two-dimensional Mo1-xWxS2 alloys
11Controlling transition metal atomic ordering in two-dimensional Mo1-xWxS2 alloys
12Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
13Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
14Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications
15Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
16Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry
17Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
18Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
19WS2 transistors on 300 mm wafers with BEOL compatibility
20Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry
21Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
22Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
23Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition
24Plasma enhanced atomic layer deposition of zinc sulfide thin films
25New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
26Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
27New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell