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New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 061510 (2018)
Date:
2018-10-02
DOI:
http://dx.doi.org/10.1116/1.5048124

Author Information

Name Institution
Cathy BugotInstitut Photovoltaïque Ile de France (IPVF)
Muriel BouttemyInstitut Photovoltaïque Ile de France (IPVF)
Nathanaëlle SchneiderInstitut Photovoltaïque Ile de France (IPVF)
Arnaud EtcheberryInstitut Photovoltaïque Ile de France (IPVF)
Daniel LincotInstitut Photovoltaïque Ile de France (IPVF)
Frédérique DonsantiInstitut Photovoltaïque Ile de France (IPVF)

Films

Thermal In2S3

Hardware used: Picosun R200
In(acac)3, Indium(III) acetylacetonate
CAS#: 14405-45-9
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
Deposition Temperature = 160C

Other In2(S,O)3

Hardware used: Picosun R200
In(acac)3, Indium(III) acetylacetonate
CAS#: 14405-45-9
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 160C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: MKS Vision 1000C-E Quadrupole 92

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Substrates

BSG, BoroSilicate Glass
Si(100)

Notes

1429