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Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells

Type:
Journal
Info:
Thin Solid Films, Available online 28 September 2014
Date:
2014-09-28
DOI:
http://dx.doi.org/10.1016/j.tsf.2014.09.036

Author Information

Name Institution
Cathy BugotInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Films

Other In2(S,O)3

Hardware used: Picosun R200
In(acac)3, Indium(III) acetylacetonate
CAS#: 14405-45-9
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 160C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Optical Bandgap
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Optical Properties
Analysis: Spectrophotometry
Diagnostic: PerkinElmer lambda 900 Spectrophotometer

Substrates

Notes

PEALD of InOS for PV application.
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