About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry

Type:
Journal
Info:
Chem. Mater. 2022, 34, 7280-7292
Date:
2022-07-21

Author Information

Name Institution
Miika MattinenEindhoven University of Technology
Farzan GityTyndall National Institute, University College Cork
Emma ColemanTyndall National Institute, University College Cork
Joris F. A. VonkEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Ray DuffyTyndall National Institute, University College Cork
Erwin (W.M.M.) KesselsEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma MoS2


Plasma WS2


Plasma TiSx


Thermal TiSx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2
Quartz
PET, Polyethylene Terephthalate
Al2O3

Notes

1744