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Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A105 (2018)
Date:
2017-10-16
DOI:
http://dx.doi.org/10.1116/1.5003361

Author Information

Name Institution
Benjamin GrovenKU Leuven
Ankit Nalin MehtaKU Leuven
Hugo BenderIMEC
Quentin SmetsIMEC
Johan MeersschautIMEC
A. FranquetIMEC
Thierry ConardIMEC
Thomas NuyttenIMEC
Patrick VerdonckIMEC
Wilfried VandervorstKU Leuven
Marc HeynsKU Leuven
Iuliana RaduIMEC
Matty CaymaxIMEC
Annelies DelabieKU Leuven

Films

Other WS2

Hardware used: ASM Eagle 12
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
H2, Hydrogen
CAS#: 1333-74-0
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF IV

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Instruments Nanoscope V

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: TLM, Transmission Line Measurement
Diagnostic: -

Substrates

Al2O3
Sapphire

Notes

1104