Inductively coupled plasma sources from Plasma ALD, LLC.

Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.

Contact us for more information.

WF₆, Tungsten Hexafluoride, CAS# 7783-82-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 15 record(s).

Number	Title
1	Room temperature plasma enhanced atomic layer deposition for TiO₂ and WO₃ films
2	Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
3	Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
4	WS₂ transistors on 300 mm wafers with BEOL compatibility
5	Nucleation mechanism during WS₂ plasma enhanced atomic layer deposition on amorphous Al₂O₃ and sapphire substrates
6	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
7	Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
8	Low temperature deposition of 2D WS₂ layers from WF₆ and H₂S precursors: impact of reducing agents
9	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
10	Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
11	Effects of NH₃ pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
12	A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
13	Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS₂ from WF₆, H₂ Plasma, and H₂S
14	Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
15	WN_x Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH₃ Plasma Radical for ULSI Applications