About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

WF6, Tungsten Hexafluoride, CAS# 7783-82-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 15 record(s).

NumberTitle
1Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
2Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
3Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
4Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
5Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
6Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
7Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
8Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
9Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
10A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
11WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
12WS2 transistors on 300 mm wafers with BEOL compatibility
13Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
14Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
15Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates