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WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications

Type:
Conference Proceedings
Info:
ECS Transactions, 3 (15) 147-152 (2007)
Date:
2007-07-01
DOI:
http://dx.doi.org/10.1149/1.2721483

Author Information

Name Institution
Dong Ho YouIPS Ltd.
Soo-Hyun KimIPS Ltd.
Ki-Hoon LeeIPS Ltd.
Sang Kyu LeeIPS Ltd.
Tea Wook SeoIPS Ltd.

Films

Plasma WN

Hardware used: Custom Direct Capacitively Coupled Plasma
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 360-520C

Thermal WN

Hardware used: Custom Direct Capacitively Coupled Plasma
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma WN

Hardware used: Custom Direct Capacitively Coupled Plasma
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Substrates

SiO2

Notes

1177