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Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization

Type:
Journal
Info:
2013 Jpn. J. Appl. Phys. 52 10MC07
Date:
2013-10-21
DOI:
http://dx.doi.org/10.7567/JJAP.52.10MC07

Author Information

Name Institution
Yeong ­Hyeon HwangKwangwoon University
Yeong ­Hyeon HwangKwangwoon University
Won ­Ju ChoKwangwoon University
Yong Tae KimKorea Institute of Science and Technology

Films

Plasma WN

Hardware used: Unknown
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Other WN

Hardware used: Unknown
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Thermal WN

Hardware used: Unknown
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
B2H6, Diborane, Boroethane, Boron hydride, Diboron hexahydride
CAS#: 19287-45-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Substrates

Notes

Abstract does not make it clear what exactly is the process. Good results with B2H6 treatment but no mention of a N-containing precursor or co-reactant.
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